
Si7100DN
Vishay Siliconix
N-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
8
R DS(on) ( Ω )
0.0035 at V GS = 4.5 V
0.0045 at V GS = 2.5 V
I D (A) e
35
35
Q g (Typ.)
40 nC
? Halogen-free Option Available
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ? Package
with Small Size and Low 1.07 mm Profile
RoHS
COMPLIANT
? 100 % R g Tested
PowerPAK 1212- 8
APPLICATIONS
? Secondary Synchronous Rectification
3.30 mm
1
S
S
3.30 mm
? Point-of-Load
2
3
S
G
D
4
D
8
7
D
D
6
D
G
5
Bottom V ie w
S
Orderin g Information: Si7100D N -T1-E3 (Lead (P b )-free)
Si7100D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
8
±8
35 e
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
35 e
26.1 a, b
20.9 a, b
60
35 e
3.2 a, b
52
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.8 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73785
S-80581-Rev. C, 17-Mar-08
www.vishay.com
1